![]() ![]() ![]() The fifth generation will include Samsung's first QLC NAND flash (four bits per cell), with a capacity of 1Tb (128GB) per die. Samsung has now also announced their fifth-generation V-NAND, which will increase the layer count further to 96 layers with relatively few other changes to the design. Samsung claims their 64-layer V-NAND in a TLC configuration can last for 7,000 to 20,000 program/erase cycles. Power consumption has been improved more significantly, with the current required for a read operation dropping by 12% and for a program operation the current required has decreased by 25%. Compared to the 48-layer third generation V-NAND, the 64-layer V-NAND offers the same read performance but approximately 11% higher write performance. Most products will be using either 256Gb or 512Gb TLC dies. This fourth generation V-NAND is now in mass production and will be rolling out to many product segments over the coming months. Last year, Samsung announced their fourth generation of 3D NAND, a 64-layer design. Based on its success with 64-layer V-NAND, Samsung has secured the fundamental technology that it needs in the future to produce V-NAND chips with one terabit capacity and more, by stacking over 90 layers of cell.Īt Flash Memory Summit this week, Samsung is sharing details of their storage technology roadmaps and showing off several prototypes. Samsung Ramps up 64-Layer V-NAND Memory Production to Accommodate Expanding Line-up of High-Performance Flash Storage Solutions. ![]()
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